Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9745
Title: Chemisorption of atomic aluminum on Si(111): Evidence for an adsorbate-induced relaxation based on ab initio cluster-model calculations
Author: Rubio Martínez, Jaime
Illas i Riera, Francesc
Ricart, J. M.
Keywords: Química de superfícies
Adsorció
Surface chemistry
Absorption
Issue Date: 1988
Publisher: The American Physical Society
Abstract: Interaction models of atomic Al with Si4H9, Si4H7, and Si6H9 clusters have been studied to simulate Al chemisorption on the Si(111) surface in the atop, fourfold atop, and open sites. Calculations were carried out using nonempirical pseudopotentials in the framework of the ab initio Hartree-Fock procedure. Equilibrium bond distances, binding energies for adsorption, and vibrational frequencies of the adatoms are calculated. Several basis sets were used in order to show the importance of polarization effects, especially in the binding energies. Final results show the importance of considering adatom-induced relaxation effects to specify the order of energy stabilities for the three different sites, the fourfold atop site being the preferred one, in agreement with experimental findings.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.38.10700
It is part of: Physical Review B, 1988, vol. 38, núm. 15, p. 10700-10710.
URI: http://hdl.handle.net/2445/9745
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Ciència dels Materials i Química Física)

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