Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98045
Title: The configurational energy gap between amorphous and crystalline silicon
Author: Kail, F.
Farjas Silva, Jordi
Roura Grabulosa, Pere
Secouard, C.
Nos Aguilà, Oriol
Bertomeu i Balagueró, Joan
Roca i Cabarrocas, P. (Pere)
Keywords: Silici
Cristal·lització
Entalpia
Calorimetria
Silicon
Crystallization
Enthalpy
Calorimetry
Issue Date: 19-Sep-2011
Publisher: Wiley-VCH
Abstract: The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1002/pssr.201105333
It is part of: physica status solidi (RRL) - Rapid Research Letters, 2011, vol. 5, num. 10-11, p. 361-363
Related resource: http://dx.doi.org/10.1002/pssr.201105333
URI: http://hdl.handle.net/2445/98045
ISSN: 1862-6254
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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