Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98047
Title: Hot wire chemical vapor deposition: limits and opportunities of protecting the tungsten catalyzer from silicide with a cavity
Author: Frigeri, Paolo Antonio
Nos Aguilà, Oriol
Bengoechea, S.
Frevert, C.
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Keywords: Tungstè
Cèl·lules solars
Deposició en fase de vapor
Silici
Tungsten
Solar cells
Vapor-plating
Silicon
Issue Date: 22-Jan-2009
Publisher: Elsevier B.V.
Abstract: Hot Wire Chemical Vapor Deposition (HW-CVD) is one of the most promising techniques for depositing the intrinsic microcrystalline silicon layer for the production of micro-morph solar cells. However, the silicide formation at the colder ends of the tungsten wire drastically reduces the lifetime of the catalyzer, thus limiting its industrial exploitation. A simple but interesting strategy to decrease the silicide formation is to hide the electrical contacts of the catalyzer in a long narrow cavity which reduces the probability of the silane molecules to reach the colder ends of the wire. In this paper, the working mechanism of the cavity is elucidated. Measurements of the thickness profile of the silicon deposited in the internal walls of the cavity have been compared with those predicted using a simple diffusion model based on the assumption of Knudsen flow. A lifetime study of the protected and unprotected wires has been carried out. The different mechanisms which determine the deterioration of the catalyzer have been identified and discussed.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2009.01.023
It is part of: Thin Solid Films, 2009, vol. 517, num. 12, p. 3427-3430
Related resource: http://dx.doi.org/10.1016/j.tsf.2009.01.023
URI: http://hdl.handle.net/2445/98047
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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