Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98054
Title: Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
Author: Muñoz Ramos, David
Voz Sánchez, Cristóbal
Martin, I.
Orpella, Albert
Alcubilla González, Ramón
Villar, F.
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Roca i Cabarrocas, P. (Pere)
Keywords: Cèl·lules solars
El·lipsometria
Solar cells
Ellipsometry
Issue Date: 8-Dec-2008
Publisher: Elsevier B.V.
Abstract: The growing interest in using thinner wafers (< 200 μm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD. The influence of the deposition parameters and the use of an intrinsic buffer layer have been considered. The microstructure of the deposited thin films has been comprehensively studied by Spectroscopic Ellipsometry in the UV-visible range. The effective recombination velocity at the back surface has been measured by the Quasi-Steady-State Photoconductance technique. Complete double-side heterojunction solar cells (1 cm 2) have been fabricated and characterized by External Quantum Efficiency and current-voltage measurements. Total-area conversion efficiencies up to 14.5% were achieved in a fully low temperature process (< 200 °C).
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.12.020
It is part of: Thin Solid Films, 2008, vol. 516, num. 20, p. 6782-6785
Related resource: http://dx.doi.org/10.1016/j.tsf.2007.12.020
URI: http://hdl.handle.net/2445/98054
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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