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http://hdl.handle.net/2445/98100
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DC Field | Value | Language |
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dc.contributor.author | Villar, Fernando | - |
dc.contributor.author | Escarré i Palou, Jordi | - |
dc.contributor.author | Antony, Aldrin | - |
dc.contributor.author | Stella, Marco | - |
dc.contributor.author | Rojas Tarazona, Fredy E. | - |
dc.contributor.author | Asensi López, José Miguel | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.date.accessioned | 2016-05-02T06:53:03Z | - |
dc.date.available | 2016-05-02T06:53:03Z | - |
dc.date.issued | 2007-06-11 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/2445/98100 | - |
dc.description.abstract | We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential. | - |
dc.format.extent | 12 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.196 | - |
dc.relation.ispartof | Thin Solid Films, 2007, vol. 516, num. 5, p. 584-587 | - |
dc.relation.uri | http://dx.doi.org/10.1016/j.tsf.2007.06.196 | - |
dc.rights | (c) Elsevier B.V., 2007 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Cèl·lules solars | - |
dc.subject.classification | Silici | - |
dc.subject.other | Solar cells | - |
dc.subject.other | Silicon | - |
dc.title | Nanocrystalline silicon thin films on PEN substrates | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 554455 | - |
dc.date.updated | 2016-05-02T06:53:09Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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554455.pdf | 104.46 kB | Adobe PDF | View/Open |
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