Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9822
Title: HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices
Author: Conesa Boj, Sònia
Director: Peiró Martínez, Francisca
Arbiol i Cobos, Jordi
Keywords: Nanotecnologia
Semiconductors
Microscòpia electrònica de transmissió
Fotònica
Propietats òptiques
Tesis de màster
Nanotechnology
Semiconductors
Transmission electron microscopy
Photonics
Optical properties
Masters theses
Issue Date: Sep-2008
Abstract: Semiconductor nanowires have recently attracted a lot of interest as potential building blocks for future electronic and optoelectronic nanodevices. In this work structural and optical properties of semiconductor nanowires are studied by means of high resolution transmission electron microscopy (HRTEM) and hotoluminescence (PL) analysis respectively. Several samples of GaAs nanowires grown under different As4 pressures are studied, and the presence of different optoelectronic properties are discussed in relation to the crystalline structures and defects found.
Note: Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jordi Arbiol i Cobos
URI: http://hdl.handle.net/2445/9822
Appears in Collections:Màster Oficial - Nanociència i Nanotecnologia

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