Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9848
Title: Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers
Author: Roura Grabulosa, Pere
Bosch Estrada, José
Morante i Lleonart, Joan Ramon
Keywords: Electrònica de l'estat sòlid
Propietats òptiques
Luminescència
Semiconductors
Microscòpia electrònica de transmissió
Solid state electronics
Optical properties
Photoluminescence
Semiconductors
Transmission electron microscopy
Issue Date: 1992
Publisher: The American Physical Society
Abstract: Optical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ HH / σ LH <1 indicates the existence of composition inhomogeneities whereas σ HH / σ LH =2.8 reveals an inhomogeneous strain field.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.46.10453
It is part of: Physical Review B, 1992, vol. 46, núm. 16, p. 10453-10456.
Related resource: http://dx.doi.org/10.1103/PhysRevB.46.10453
URI: http://hdl.handle.net/2445/9848
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Electrònica)

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