Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9849
Title: Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
Author: Roura Grabulosa, Pere
Benyattou, T.
Guillot, G.
Moncorge, R.
Ulrici, W.
Keywords: Luminescència
Semiconductors
Photoluminescence
Semiconductors
Issue Date: 1992
Publisher: The American Physical Society
Abstract: The time dependence of the 2 T 2 → 2 E photoluminescence transition of Ti 3 + Ga in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time τ 0 =2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by Ti 3 + Ga in the excited state whereas the results on p-type conducting samples suggest hole localization at the Ti 3 + Ga .
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.45.11698
It is part of: Physical Review B, 1992, vol. 45, núm. 20, p. 11698-11701.
Related resource: http://dx.doi.org/10.1103/PhysRevB.45.11698
URI: http://hdl.handle.net/2445/9849
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Electrònica)

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