Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/9849| Title: | Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP |
| Author: | Roura Grabulosa, Pere Benyattou, T. Guillot, G. Moncorge, R. Ulrici, W. |
| Keywords: | Luminescència Semiconductors Photoluminescence Semiconductors |
| Issue Date: | 1992 |
| Publisher: | The American Physical Society |
| Abstract: | The time dependence of the 2 T 2 → 2 E photoluminescence transition of Ti 3 + Ga in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time τ 0 =2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by Ti 3 + Ga in the excited state whereas the results on p-type conducting samples suggest hole localization at the Ti 3 + Ga . |
| Note: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.45.11698 |
| It is part of: | Physical Review B, 1992, vol. 45, núm. 20, p. 11698-11701. |
| URI: | http://hdl.handle.net/2445/9849 |
| Related resource: | http://dx.doi.org/10.1103/PhysRevB.45.11698 |
| ISSN: | 0163-1829 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.