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Title: Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition
Author: Polo Trasancos, Ma. del Carmen
Peiró Martínez, Francisca
Cifre, J.
Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Andreu i Batallé, Jordi
Keywords: Silici
Deposició química en fase vapor
Pel·lícules fines
Creixement cristal·lí
Chemical vapor deposition
Thin films
Crystal growth
Issue Date: 1995
Publisher: Institute of Physics (IOP)
Abstract: Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising.
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It is part of: Institute of Physics Conference Series, 1995, vol. 146, p. 503-506
ISSN: 0951-3248
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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