Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9945
Title: Determination of the electron density in GaAs/AlxGa1-xAs heterostructures
Author: Martorell Domenech, Juan
Sprung, Donald W. L.
Keywords: Electrònica quàntica
Física de l'estat sòlid
Quantum electronics
Solid state physics
Issue Date: 1994
Publisher: The American Physical Society
Abstract: An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density, σ − . A suitable linear approximation is found that provides simple and accurate analytic expressions for σ − in terms of the physical parameters of the device.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.49.13750
It is part of: Physical Review B, 1994, vol. 49, núm. 19, p. 13750-13759.
Related resource: http://dx.doi.org/10.1103/PhysRevB.49.13750
URI: http://hdl.handle.net/2445/9945
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Física Quàntica i Astrofísica)

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