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http://hdl.handle.net/2445/103227
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DC Field | Value | Language |
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dc.contributor.author | Garcia-Castello, Nuria | - |
dc.contributor.author | Illera Robles, Sergio | - |
dc.contributor.author | Prades García, Juan Daniel | - |
dc.contributor.author | Ossicini, Stefano | - |
dc.contributor.author | Cirera Hernández, Albert | - |
dc.contributor.author | Guerra, Roberto | - |
dc.date.accessioned | 2016-11-03T15:44:04Z | - |
dc.date.available | 2016-11-03T15:44:04Z | - |
dc.date.issued | 2015-06-15 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/2445/103227 | - |
dc.description.abstract | In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells. | - |
dc.format.extent | 8 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Royal Society of Chemistry | - |
dc.relation.isformatof | Versió postprint del document publicat a: https://doi.org/10.1039/C5NR02616D | - |
dc.relation.ispartof | Nanoscale, 2015, vol. 7, num. 29, p. 12564-12571 | - |
dc.relation.uri | https://doi.org/10.1039/C5NR02616D | - |
dc.rights | (c) Garcia-Castello, Nuria et al., 2015 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Transport d'electrons | - |
dc.subject.classification | Semiconductors | - |
dc.subject.classification | Electrònica quàntica | - |
dc.subject.classification | Nanoelectrònica | - |
dc.subject.other | Electron transport | - |
dc.subject.other | Semiconductors | - |
dc.subject.other | Quantum electronics | - |
dc.subject.other | Nanoelectronics | - |
dc.title | Energetics and carrier transport in doped Si/SiO2 quantum dots | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 659358 | - |
dc.date.updated | 2016-11-03T15:44:09Z | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/320796/EU//MODPHYSFRICT | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
dc.identifier.pmid | 26144524 | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
Files in This Item:
File | Description | Size | Format | |
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659358.pdf | 3.32 MB | Adobe PDF | View/Open |
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