Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10631
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dc.contributor.authorHernández Ramírez, Franciscocat
dc.contributor.authorTarancón Rubio, Albertcat
dc.contributor.authorCasals Guillén, Olgacat
dc.contributor.authorPellicer Vilà, Eva M.cat
dc.contributor.authorRodríguez, J.cat
dc.contributor.authorRomano Rodríguez, Albertcat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.contributor.authorBarth, Svencat
dc.contributor.authorMathur, Sanjaycat
dc.date.accessioned2009-12-29T10:55:55Z-
dc.date.available2009-12-29T10:55:55Z-
dc.date.issued2007cat
dc.identifier.issn0163-1829cat
dc.identifier.urihttp://hdl.handle.net/2445/10631-
dc.description.abstractA simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to BE= 0.4 eV.-
dc.format.extent5 p.cat
dc.format.mimetypeapplication/pdfeng
dc.language.isoengeng
dc.publisherThe American Physical Societycat
dc.relation.isformatofReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.76.085429cat
dc.relation.ispartofPhysical Review B, 2007, vol. 76, núm. 8, p. 085429-1-085429-5cat
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.76.085429-
dc.rights(c) The American Physical Society, 2007cat
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationSuperconductivitatcat
dc.subject.classificationEspintrònicacat
dc.subject.otherSuperconductivityeng
dc.subject.otherElectronic structure and electrical properties of surfaceseng
dc.titleElectrical properties of individual tin oxide nanowires contacted to platinum electrodeseng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec552731cat
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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