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http://hdl.handle.net/2445/10632
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DC Field | Value | Language |
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dc.contributor.author | Hernández Ramírez, Francisco | cat |
dc.contributor.author | Tarancón Rubio, Albert | cat |
dc.contributor.author | Casals Guillén, Olga | cat |
dc.contributor.author | Pellicer Vilà, Eva M. | cat |
dc.contributor.author | Rodríguez, J. | cat |
dc.contributor.author | Romano Rodríguez, Albert | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.contributor.author | Barth, Sven | cat |
dc.contributor.author | Mathur, Sanjay | cat |
dc.date.accessioned | 2009-12-29T10:56:35Z | - |
dc.date.available | 2009-12-29T10:56:35Z | - |
dc.date.issued | 2007 | cat |
dc.identifier.issn | 0163-1829 | cat |
dc.identifier.uri | http://hdl.handle.net/2445/10632 | - |
dc.description.abstract | A simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to BE= 0.4 eV. | - |
dc.format.extent | 5 p. | cat |
dc.format.mimetype | application/pdf | eng |
dc.language.iso | eng | eng |
dc.publisher | The American Physical Society | cat |
dc.relation.isformatof | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.76.085429 | cat |
dc.relation.ispartof | Physical Review B, 2007, vol. 76, núm. 8,p. 085429-1-085429-5 | cat |
dc.relation.uri | http://dx.doi.org/10.1103/PhysRevB.76.085429 | - |
dc.rights | (c) The American Physical Society, 2007 | cat |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Superconductivitat | cat |
dc.subject.classification | Espintrònica | cat |
dc.subject.other | Superconductivity | eng |
dc.subject.other | Electronic structure and electrical properties of surfaces | eng |
dc.title | Characterization of the electrical properties of individual tin-oxide nanowires contacted to platinum nanoelectrodes | eng |
dc.type | info:eu-repo/semantics/article | eng |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 553766 | cat |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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553766.pdf | 354.95 kB | Adobe PDF | View/Open |
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