Please use this identifier to cite or link to this item:
Title: Modulation of the electroluminescence emission from ZnO/Si NCs/p-Si light-emitting devices via pulsed excitation
Author: López Vidrier, Julià
Gutsch, Sebastian
Blázquez, O. (Oriol)
Hiller, Daniel
Laube, Jan
Kaur, R.
Hernández Márquez, Sergi
Garrido Fernández, Blas
Zacharias, Margit
Keywords: Òxid de zinc
Zinc oxide
Issue Date: 19-May-2017
Publisher: American Institute of Physics
Abstract: In this work, the electroluminescence (EL) emission of zinc oxide (ZnO)/Si nanocrystals (NCs)-based light-emitting devices was studied under pulsed electrical excitation. Both Si NCs and deep-level ZnO defects were found to contribute to the observed EL. Symmetric square voltage pulses (50-μs period) were found to notably enhance EL emission by about one order of magnitude. In addition, the control of the pulse parameters (accumulation and inversion times) was found to modify the emission lineshape, long inversion times (i.e., short accumulation times) suppressing ZnO defects contribution. The EL results were discussed in terms of the recombination dynamics taking place within the ZnO/Si NCs heterostructure, suggesting the excitation mechanism of the luminescent centers via a combination of electron impact, bipolar injection, and sequential carrier injection within their respective conduction regimes.
Note: Reproducció del document publicat a:
It is part of: Applied Physics Letters, 2017, vol. 110, num. 20, p. 203104-1-203104-5
Related resource:
ISSN: 0003-6951
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Articles publicats en revistes (Institut de Nanociència i Nanotecnologia (IN2UB))

Files in This Item:
File Description SizeFormat 
671573.pdf1.51 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.