Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/124956
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dc.contributor.authorGarcia Llamas, Elena-
dc.contributor.authorMerino, José Manuel-
dc.contributor.authorSerna, Rosalía-
dc.contributor.authorFontané Sánchez, Xavier-
dc.contributor.authorVictorov, Ivan A.-
dc.contributor.authorPérez Rodríguez, Alejandro-
dc.contributor.authorLeón, Máximo-
dc.contributor.authorBodnar, Ivan V.-
dc.contributor.authorIzquierdo Roca, Victor-
dc.contributor.authorCaballero, Raquel-
dc.date.accessioned2018-10-01T10:53:29Z-
dc.date.available2018-10-01T10:53:29Z-
dc.date.issued2015-12-30-
dc.identifier.issn0927-0248-
dc.identifier.urihttp://hdl.handle.net/2445/124956-
dc.description.abstractThe linear optical properties of Cu2ZnSn1-xGexS4 high quality single crystals with a wide range of Ge contents (x = 0.1, 0.3, 0.5, 0.7, 0.9 and 1) have been investigated in the ultraviolet and near infrared range using spectroscopic ellipsometry measurements. From the analysis of the complex dielectric function spectra it has been found that the bandgap E0 increases continuously from 1.49 eV to 2.25 eV with the Ge content. Furthermore, the evolution of the interband transitions E1A and E1B has been also determined. Raman scattering using three different excitation wavelengths and its analysis have been performed to confirm the absence of secondary phases in the samples, and to distinguish between stannite, wurtzite, wurzstannite and kesterite structures. Additionally, the analysis of the high resolution Raman spectra obtained in samples with different [Ge]/([Ge]+[Sn]) ratios allows describing a bimodal behavior of the dominant A modes. The understanding of the incorporation of Ge into the Cu2ZnSnS4 lattice is fundamental in order to develop efficient bandgap engineering of these compounds towards the fabrication of kesterite based solar cells with enhanced performance-
dc.format.extent7 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.relation.isformatofVersió postprint del document publicat a: https://doi.org/10.1016/j.solmat.2015.12.021-
dc.relation.ispartofSolar Energy Materials and Solar Cells, 2015, vol. 158, num. Part 2, p. 147-153-
dc.relation.urihttps://doi.org/10.1016/j.solmat.2015.12.021-
dc.rightscc-by-nc-nd (c) Elsevier B.V., 2015-
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationPropietats òptiques-
dc.subject.classificationEspectroscòpia Raman-
dc.subject.classificationCèl·lules solars-
dc.subject.classificationEl·lipsometria-
dc.subject.otherOptical properties-
dc.subject.otherRaman spectroscopy-
dc.subject.otherSolar cells-
dc.subject.otherEllipsometry-
dc.titleWide band-gap tuning Cu2ZnSn1-xGexS4 single crystals: optical and vibrational properties-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/acceptedVersion-
dc.identifier.idgrec660696-
dc.date.updated2018-10-01T10:53:29Z-
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/269167/EU//PVICOKEST-
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/316488/EU//KESTCELLS-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Publicacions de projectes de recerca finançats per la UE

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