Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/125195
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dc.contributor.advisorFina Martínez, Ignasi-
dc.contributor.authorPrieto Viertel, Guillermo-
dc.date.accessioned2018-10-09T14:40:20Z-
dc.date.available2018-10-09T14:40:20Z-
dc.date.issued2018-06-
dc.identifier.urihttps://hdl.handle.net/2445/125195-
dc.descriptionTreballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutor: Ignasi Finaca
dc.description.abstractFerroelectric materials are of potential interest for their integration in memristive devices. Polarization switching in ferroelectric thin film junctions might lead to a change of the electronic band diagram of the device, which can result in important changes of resistance. This effect is known as electroresistance. Electroresistance in 12.2, 24.3 and 36.5 nm BTO thin films junctions is investigated. It is observed that electroresistance decreases with thickness. In addition, ferroelectric characterization allows to conclude that switchable ferroelectric polarization also decreases with thickness. Thus, we conclude that electroresistance is intimately linked to the ferroelectric switching process.ca
dc.format.extent5 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengca
dc.rightscc-by-nc-nd (c) Prieto, 2018-
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.sourceTreballs Finals de Grau (TFG) - Física-
dc.subject.classificationFerroelectricitatcat
dc.subject.classificationTeoria de la commutaciócat
dc.subject.classificationTreballs de fi de graucat
dc.subject.otherFerroelectricityeng
dc.subject.otherSwitching theoryeng
dc.subject.otherBachelor's theseseng
dc.titleElectroresistance in non-tunnelling ferroelectric junctionseng
dc.typeinfo:eu-repo/semantics/bachelorThesisca
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca
Appears in Collections:Treballs Finals de Grau (TFG) - Física

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