Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/126208
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Hernández Márquez, Sergi | - |
dc.contributor.advisor | Blázquez, O. (Oriol) | - |
dc.contributor.author | Bonet Isidro, Ferran | - |
dc.date.accessioned | 2018-11-19T11:04:16Z | - |
dc.date.available | 2018-11-19T11:04:16Z | - |
dc.date.issued | 2018-07 | - |
dc.identifier.uri | http://hdl.handle.net/2445/126208 | - |
dc.description | Màster en Nanociència i Nanotecnologia, Facultat de Física, Universitat de Barcelona, Curs: 2017-2018. Tutors: Sergi Hernández , Oriol Blázquez | ca |
dc.description.abstract | Memristors are electronic devices that present resistive switching. Their main application is the fabrication of digital memories. In this work Tb doped-ZnO based memristors are characterized and their properties are compared to the ones of undoped ZnO devices. The study shows that it is possible to obtain switching in doped ZnO-based devices at lower currents. Devices doped with rare earth ions also exhibit light emission, while preserving their resistive switching properties. This was not observed in the undoped devices and is an important advantage for developing optically read digital memories. Finally, the electrical conduction mechanisms present in the memristors are also analyzed | ca |
dc.format.extent | 10 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | ca |
dc.rights | cc-by-nc-nd (c) Bonet, 2018 | cat |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.source | Màster Oficial - Nanociència i Nanotecnologia | - |
dc.subject.classification | Nanoelectrònica | cat |
dc.subject.classification | Circuits electrònics | cat |
dc.subject.classification | Teoria de la commutació | cat |
dc.subject.classification | Treballs de fi de màster | - |
dc.subject.other | Nanoelectronics | eng |
dc.subject.other | Electronic circuits | eng |
dc.subject.other | Switching theory | eng |
dc.subject.other | Master's theses | - |
dc.title | Effect of rare earth on ZnO-based memristors | eng |
dc.type | info:eu-repo/semantics/masterThesis | ca |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | ca |
Appears in Collections: | Màster Oficial - Nanociència i Nanotecnologia |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Bonet-Isidro-Ferran.pdf | 2.88 MB | Adobe PDF | View/Open |
This item is licensed under a
Creative Commons License