Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/127122
Title: Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells
Author: Nguyen, Hieu Trung
Ros Costals, Eloi
Tom, Thomas
Bertomeu i Balagueró, Joan
Asensi López, José Miguel
Andreu i Batallé, Jordi
Martin Garcia, Isidro
Ortega Villasclaras, Pablo Rafael
Garin Escriva, Moises
Puigdollers i González, Joaquim
Voz Sánchez, Cristóbal
Alcubilla González, Ramón
Keywords: Cèl·lules solars
Cèl·lules fotovoltaiques
Silici
Conductivitat elèctrica
Solar cells
Photovoltaic cells
Silicon
Electric conductivity
Issue Date: 2-Nov-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Abstract: Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a trade-off in the metal thickness to achieve simultaneously high transparency and low sheet resistance. It has been demonstrated that an ultrathin gold seed prevents the tendency of silver to form clusters. This wetting effect reduces the metal thickness needed to form a continuous film, which leads to a higher averaged transmittance and very low sheet resistance. On the other hand, vanadium pentoxide on silicon forms a high quality hole-selective contact. Thus, these structures can be used as an all-in-one transparent electrode and selective contact for a new kind of heterojunction solar cells. This concept has been proved in a 13.3% efficient solar cell fabricated on n-type silicon wafers. Besides dopant-free, the complete fabrication route did not require any sputtered transparent electrode.
Note: Versió postprint del document publicat a: https://doi.org/10.1109/JPHOTOV.2018.2875876
It is part of: IEEE Journal of Photovoltaics, 2018, vol. 9, num. 1, p. 72-77
URI: http://hdl.handle.net/2445/127122
Related resource: https://doi.org/10.1109/JPHOTOV.2018.2875876
ISSN: 2156-3381
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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