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http://hdl.handle.net/2445/128618
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DC Field | Value | Language |
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dc.contributor.author | Ramírez Ramírez, Joan Manel | - |
dc.contributor.author | Ferrarese Lupi, Federico | - |
dc.contributor.author | Jambois, Olivier | - |
dc.contributor.author | Berencén Ramírez, Yonder Antonio | - |
dc.contributor.author | Navarro Urrios, Daniel | - |
dc.contributor.author | Anopchenko, Aleksei | - |
dc.contributor.author | Marconi, Alessandro | - |
dc.contributor.author | Prtljaga, Nikola | - |
dc.contributor.author | Tengattini, Andrea | - |
dc.contributor.author | Pavesi, Lorenzo | - |
dc.contributor.author | Colonna, Jean-Philippe | - |
dc.contributor.author | Fedeli, Jean-Marc | - |
dc.contributor.author | Garrido Fernández, Blas | - |
dc.date.accessioned | 2019-02-22T10:14:36Z | - |
dc.date.available | 2019-02-22T10:14:36Z | - |
dc.date.issued | 2012-03-13 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/2445/128618 | - |
dc.description.abstract | The electroluminescence (EL) at 1.54 µm of metal-oxide-semiconductor (MOS) devices with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at the Fowler-Nordheim injection threshold (above 5 MV cm−1) and dominates for high-field APV excitation. | - |
dc.format.extent | 9 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Institute of Physics (IOP) | - |
dc.relation.isformatof | Versió postprint del document publicat a: https://doi.org/10.1088/0957-4484/23/12/125203 | - |
dc.relation.ispartof | Nanotechnology, 2012, vol. 23, num. 12, p. 125203-125211 | - |
dc.relation.uri | https://doi.org/10.1088/0957-4484/23/12/125203 | - |
dc.rights | (c) Institute of Physics (IOP), 2012 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Metall-òxid-semiconductors | - |
dc.subject.classification | Compostos de silici | - |
dc.subject.classification | Transferència d'energia | - |
dc.subject.other | Metal oxide semiconductors | - |
dc.subject.other | Silicon compounds | - |
dc.subject.other | Energy transfer | - |
dc.title | Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 600582 | - |
dc.date.updated | 2019-02-22T10:14:36Z | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
Files in This Item:
File | Description | Size | Format | |
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600582.pdf | 537.03 kB | Adobe PDF | View/Open |
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