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http://hdl.handle.net/2445/13168
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DC Field | Value | Language |
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dc.contributor.author | Prieto, J. A. | cat |
dc.contributor.author | Armelles Reig, G. | cat |
dc.contributor.author | Utzmeier, Thomas | cat |
dc.contributor.author | Briones Fernández-Pola, Fernando | cat |
dc.contributor.author | Ferrer, J. C. | cat |
dc.contributor.author | Peiró Martínez, Francisca | cat |
dc.contributor.author | Cornet i Calveras, Albert | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.date.accessioned | 2010-06-25T08:22:33Z | - |
dc.date.available | 2010-06-25T08:22:33Z | - |
dc.date.issued | 1998 | - |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.uri | http://hdl.handle.net/2445/13168 | - |
dc.description.abstract | Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E 1 and E 1 + Δ 1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E 1 and E 1 + Δ 1 transitions. | - |
dc.format.extent | 4 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Physical Society | cat |
dc.relation.isformatof | Reproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.80.1094 | cat |
dc.relation.ispartof | Physical Review Letters, 1998, vol. 80, núm. 5, p. 1094-1097 | cat |
dc.relation.uri | http://dx.doi.org/10.1103/PhysRevLett.80.1094 | - |
dc.rights | (c) American Physical Society, 1998 | cat |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Matèria condensada | cat |
dc.subject.classification | Propietats òptiques | cat |
dc.subject.classification | Electrònica quàntica | cat |
dc.subject.other | Condensed matter | eng |
dc.subject.other | Quantum electronics | eng |
dc.subject.other | Optical properties | eng |
dc.title | Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures | eng |
dc.type | info:eu-repo/semantics/article | eng |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 129014 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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129014.pdf | 433 kB | Adobe PDF | View/Open |
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