Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/13171
Title: | Electric-field control of exchange bias in multiferroic epitaxial heterostructures |
Author: | Laukhin, Vladimir Skumryev, Vassil Hristov Martí, X. Hrabovsky, D. Sánchez Barrera, Florencio García-Cuenca Varona, María Victoria Ferrater Martorell, Cèsar Varela Fernández, Manuel, 1956- Lüders, R. Bobo, J. F. Fontcuberta i Griñó, Josep |
Keywords: | Electrònica quàntica Semiconductors Microelectrònica Qunatum electronics Semiconductors Microelectronics |
Issue Date: | 2006 |
Publisher: | American Physical Society |
Abstract: | The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices. |
Note: | Reproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.97.227201 |
It is part of: | Physical Review Letters, 2006, vol. 97, núm. 22, p. 227201-1-227201-4 |
URI: | http://hdl.handle.net/2445/13171 |
Related resource: | http://dx.doi.org/10.1103/PhysRevLett.97.227201 |
ISSN: | 0031-9007 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
549576.pdf | 865.51 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.