1. Dipòsit Digital de la Universitat de Barcelona
  2. Recerca
  3. Enginyeria Electrònica i Biomèdica
  4. Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/148184
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBlázquez, O. (Oriol)-
dc.contributor.authorFrieiro Castro, Juan Luis-
dc.contributor.authorLópez Vidrier, Julià-
dc.contributor.authorGuillaume, Clément-
dc.contributor.authorPortier, Xavier-
dc.contributor.authorLabbé, Christophe-
dc.contributor.authorSanchis, Pablo-
dc.contributor.authorHernández Márquez, Sergi-
dc.contributor.authorGarrido Fernández, Blas-
dc.date.accessioned2020-01-20T11:08:12Z-
dc.date.available2020-01-20T11:08:12Z-
dc.date.issued2018-10-29-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2445/148184-
dc.description.abstractThe resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911-
dc.format.extent5 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: https://doi.org/10.1063/1.5046911-
dc.relation.ispartofApplied Physics Letters, 2018, vol. 113, num. 183502-
dc.relation.urihttps://doi.org/10.1063/1.5046911-
dc.rights(c) American Institute of Physics , 2018-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationÒxid de zinc-
dc.subject.classificationPel·lícules fines-
dc.subject.classificationTeoria de la commutació-
dc.subject.classificationNanoelectrònica-
dc.subject.otherZinc oxide-
dc.subject.otherThin films-
dc.subject.otherSwitching theory-
dc.subject.otherNanoelectronics-
dc.titleResistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec682896-
dc.date.updated2020-01-20T11:08:12Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Files in This Item:
File Description SizeFormat 
682896.pdf899.92 kBAdobe PDFView/Open
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.