Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/15724
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dc.contributor.authorPitanti, Alessandrocat
dc.contributor.authorNavarro Urrios, Danielcat
dc.contributor.authorPrtljaga, Nikolacat
dc.contributor.authorDaldosso, Nicolacat
dc.contributor.authorGourbilleau, Fabricecat
dc.contributor.authorRizk, Richardcat
dc.contributor.authorGarrido Fernández, Blascat
dc.contributor.authorPavesi, Lorenzocat
dc.date.accessioned2011-01-25T12:51:43Z-
dc.date.available2011-01-25T12:51:43Z-
dc.date.issued2010-09-13-
dc.identifier.issn1089-7550-
dc.identifier.urihttp://hdl.handle.net/2445/15724-
dc.description.abstractWe report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (< 200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface. (C) 2010 American Institute of Physics.eng
dc.format.extent8 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicseng
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.3476286cat
dc.relation.ispartofJournal of Applied Physics, 2010, vol. 108, núm. 5, p. 53518-1-53518-8-
dc.relation.urihttp://dx.doi.org/10.1063/1.3476286-
dc.rights(c) American Institute of Physics, 2010eng
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationSemiconductorscat
dc.subject.classificationNanopartículescat
dc.subject.otherSemiconductorseng
dc.subject.otherNanoparticleseng
dc.titleEnergy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle sampleseng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec585169-
dc.date.updated2011-01-14T13:50:56Z-
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS-
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Publicacions de projectes de recerca finançats per la UE

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