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http://hdl.handle.net/2445/15724
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DC Field | Value | Language |
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dc.contributor.author | Pitanti, Alessandro | cat |
dc.contributor.author | Navarro Urrios, Daniel | cat |
dc.contributor.author | Prtljaga, Nikola | cat |
dc.contributor.author | Daldosso, Nicola | cat |
dc.contributor.author | Gourbilleau, Fabrice | cat |
dc.contributor.author | Rizk, Richard | cat |
dc.contributor.author | Garrido Fernández, Blas | cat |
dc.contributor.author | Pavesi, Lorenzo | cat |
dc.date.accessioned | 2011-01-25T12:51:43Z | - |
dc.date.available | 2011-01-25T12:51:43Z | - |
dc.date.issued | 2010-09-13 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | http://hdl.handle.net/2445/15724 | - |
dc.description.abstract | We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (< 200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface. (C) 2010 American Institute of Physics. | eng |
dc.format.extent | 8 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | eng |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3476286 | cat |
dc.relation.ispartof | Journal of Applied Physics, 2010, vol. 108, núm. 5, p. 53518-1-53518-8 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.3476286 | - |
dc.rights | (c) American Institute of Physics, 2010 | eng |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Semiconductors | cat |
dc.subject.classification | Nanopartícules | cat |
dc.subject.other | Semiconductors | eng |
dc.subject.other | Nanoparticles | eng |
dc.title | Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 585169 | - |
dc.date.updated | 2011-01-14T13:50:56Z | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
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File | Description | Size | Format | |
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585169.pdf | 435.51 kB | Adobe PDF | View/Open |
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