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dc.contributor.advisorAsensi López, José Miguel-
dc.contributor.authorBloch Padilla, Alan-
dc.descriptionTreballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2020, Tutor: José Miguel Asensi Lópezca
dc.description.abstractThis work uses a simulation based on the program LTspice with data provided by a Fortran based program in order to evaluate the contact resistivity of a layer of MoOx on top of a sample of n-Si to examine their properties when used in heterojunction solar cells. This is done following a model that uses sheet resistivity and the finite element method to generate a resistor network representing those elements that imitates the TLM technique in the microscopical order. We will use the simulation in order to measure the resistance of our system for different distances between electrodes and thicknesses of the MoOx layer to evaluate the influence of that thickness in the contact resistivity and other propertiesca
dc.format.extent5 p.-
dc.rightscc-by-nc-nd (c) Bloch, 2020-
dc.sourceTreballs Finals de Grau (TFG) - Física-
dc.subject.classificationCèl·lules solarscat
dc.subject.classificationTreballs de fi de graucat
dc.subject.otherSolar cellseng
dc.subject.otherBachelor's theseseng
dc.titleModeling of TLM measures in heterojunction solar cellseng
Appears in Collections:Treballs Finals de Grau (TFG) - Física

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