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Title: | Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells |
Author: | Tom, Thomas López-Pintó, Nicolau Asensi López, José Miguel Andreu i Batallé, Jordi Bertomeu i Balagueró, Joan Ros Costals, Eloi Puigdollers i González, Joaquim Voz Sánchez, Cristóbal |
Keywords: | Silici Cèl·lules solars Metalls de transició Silicon Solar cells Transition metals |
Issue Date: | 31-Oct-2020 |
Publisher: | MDPI |
Abstract: | As optoelectronic devices continue to improve, control over film thickness has become crucial, especially in applications that require ultra-thin films. A variety of undesired effects may arise depending on the specific growth mechanism of each material, for instance a percolation threshold thickness is present in Volmer-Webber growth of materials such as silver. In this paper, we explore the introduction of aluminum in silver films as a mechanism to grow ultrathin metallic films of high transparency and low sheet resistance, suitable for many optoelectronic applications. Furthermore, we implemented such ultra-thin metallic films in Dielectric/Metal/Dielectric (DMD) structures based on Aluminum-doped Zinc Oxide (AZO) as the dielectric with an ultra-thin silver aluminum (Ag:Al) metallic interlayer. The multilayer structures were deposited by magnetron sputtering, which offers an industrial advantage and superior reliability over thermally evaporated DMDs. Finally, we tested the optimized DMD structures as a front contact for n-type silicon solar cells by introducing a hole-selective vanadium pentoxide (V2O5) dielectric layer. |
Note: | Reproducció del document publicat a: https://doi.org/10.3390/ma13214905 |
It is part of: | Materials, 2020, vol. 13, num. 21, p. 4905 |
URI: | http://hdl.handle.net/2445/171681 |
Related resource: | https://doi.org/10.3390/ma13214905 |
ISSN: | 1996-1944 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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