Please use this identifier to cite or link to this item:
Title: Over 10% efficient wide bandgap CIGSe solar cells on transparent substrate with Na predeposition treatment
Author: Salem, Mohamed Ould
Fonoll Rubio, Robert
Giraldo Muñoz, Sergio
Sánchez González, Yudania
Placidi, Marcel
Izquierdo Roca, Victor
Malerba, Claudia
Valentini, Matteo
Sylla, Diouldé
Thomere, Angelica
Ahmedou, Dah Ould
Saucedo Silva, Edgardo
Pérez Rodríguez, Alejandro
Li-Kao, Zacharie Jehl
Keywords: Cèl·lules solars
Pel·lícules fines
Solar cells
Thin films
Issue Date: 11-Sep-2020
Publisher: Wiley-VCH
Abstract: With the recent rise of new photovoltaic applications, it has become necessary to develop specific optoelectronic properties for thin‐film technologies such as Cu(In,Ga)Se2 and to take advantage of their high degree of tunability. The feasibility of efficient wide bandgap absorbers on transparent conductive oxide substrates is, in that context, of critical importance. Using an original approach based on a predeposition sodium treatment, Cu(In,Ga)Se2 absorbers fabricated by sputtering and reactive annealing with a Ga to (Ga + In) content over 0.7 and an optical bandgap above 1.4 eV are deposited on transparent fluorine‐doped tin oxide films, with the insertion of an ultrathin MoSe2 layer preserving the contact's ohmicity. Different material characterizations are carried out, and a thorough Raman analysis of the absorber reveals that the sodium pretreatment significantly enhances the Ga incorporation into the chalcopyrite matrix, along with markedly improving the film's morphology and crystalline quality. This translates to a spectacular boost of the photovoltaic performance for the resulting solar cell as compared with a reference device without Na, specifically in the voltage and fill factor. Eventually, an efficiency exceeding 10% is obtained without antireflection coating, a record value bridging the gap with the state of the art on nontransparent substrates.
Note: Reproducció del document publicat a:
It is part of: Solar RRL, 2020, vol. 4, num. 11, p. 2000284
Related resource:
ISSN: 2367-198X
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Files in This Item:
File Description SizeFormat 
706603.pdf1.37 MBAdobe PDFView/Open

This item is licensed under a Creative Commons License Creative Commons