Growth of 𝜷-Ga2O3 nanowires via CVD using Au catalyst

Abstract

Monoclinic gallium oxide nanowires have been synthesised on a silicon substrate by chemical vapor deposition using metal gallium as a precursor, argon as a carrier gas and gold as a catalyst. The effect of the separation distance between metal source and substrate, growth temperature, gas flow rate, duration of the growth and the catalyst role have been studied using several characterization techniques