Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/195846
Title: Effect of intrinsic point defects on the catalytic and electronic properties of Cu2WS4 single layer: Ab initio calculations
Author: Ouahrani, Taril
Boufatah, Reda M.
Benaissa, Mohammed
Morales Garcia, Angel
Badawi, Michael
Errandonea, Daniel
Keywords: Estructura electrònica
Mecànica aplicada
Electronic structure
Applied mechanics
Issue Date: 17-Feb-2023
Publisher: American Physical Society
Abstract: The challenges imposed by climate change require the continued improvement and identification of materials for the development of green technologies. Point defect engineering is a promising technology for producing green hydrogen by taking advantage of catalytic hydrogen evolution reactions. In this work, we investigate the role of anionic and cationic vacancy point defects, as well as the nature of the active sites, in the catalytic activation of Cu2WS4 single layers. The stability of the pristine and defective structures of Cu2WS4 has been thoroughly investigated using density-functional theory calculations. A deep analysis of the formation enthalpy indicates that the Cu vacancy is the chemically most favorable vacancy. However, the calculated adsorption energy indicates that the presence of such vacancies slightly enhances the hydrogen evolution reaction. In contrast, the formation of an S vacancy considerably magnifies the same reaction in Cu2WS4 single layers.
Note: Reproducció del document publicat a: https://doi.org/10.1103/PhysRevMaterials.7.025403
It is part of: Physical Review Materials, 2023, vol. 7, num. 2, p. 025403
URI: https://hdl.handle.net/2445/195846
Related resource: https://doi.org/10.1103/PhysRevMaterials.7.025403
ISSN: 2475-9953
Appears in Collections:Articles publicats en revistes (Ciència dels Materials i Química Física)

Files in This Item:
File Description SizeFormat 
732937.pdf3.5 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.