Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/199435
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dc.contributor.authorGonzález, Sergio-
dc.contributor.authorVescio, Giovanni-
dc.contributor.authorFrieiro Castro, Juan Luis-
dc.contributor.authorHauser, Alina-
dc.contributor.authorLinardi, Flavio-
dc.contributor.authorLópez Vidrier, Julià-
dc.contributor.authorOszajca, Marek-
dc.contributor.authorHernández Márquez, Sergi-
dc.contributor.authorCirera Hernández, Albert-
dc.contributor.authorGarrido, Blas-
dc.date.accessioned2023-06-19T17:46:00Z-
dc.date.available2023-06-19T17:46:00Z-
dc.date.issued2022-01-27-
dc.identifier.issn2196-7350-
dc.identifier.urihttp://hdl.handle.net/2445/199435-
dc.description.abstractTransparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE-LED) and organic OLED architectures as transport layers. Solution-processed metal oxide inks have already been demonstrated, although there is still a need for high-quality inkjet-printable metal oxide inks with a thermal post-process below 200 °C. The set of inks in this work are adapted from low-boiling point colloidal suspensions of metal oxide nanoparticles synthesized via flame spray pyrolysis. High quality, pinhole- and wrinkle-free inkjet-printed layers are obtained at low temperatures through vacuum oven post process, as proven by scanning electron microscopy. The crystallinity of the layers is confirmed by X-ray diffraction, showing the expected hexagonal and cubic structures respectively for ZnO and NiO. The thin film layers reach over 70% (ZnO) and 90% (NiO) transparency in the visible spectrum. Their implementation in the inkjet-printed p-n diode shows excellent I-V rectifying behavior with an ON/OFF ratio of two orders of magnitude at ±3 V and a forward threshold voltage of 2 V. Furthermore, the device exhibits an increase in photocurrent around four orders of magnitude when illuminated under a 1-sun solar simulator.-
dc.format.extent8 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherWiley-
dc.relation.isformatofReproducció del document publicat a: https://doi.org/10.1002/admi.202300035-
dc.relation.ispartofAdvanced Materials Interfaces, 2022, vol. 10, num. 15, p. 1-8-
dc.relation.urihttps://doi.org/10.1002/admi.202300035-
dc.rightscc-by (c) González, Sergio et al., 2022-
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationDíodes electroluminescents-
dc.subject.classificationÒxids-
dc.subject.classificationOptoelectrònica-
dc.subject.otherLight emitting diodes-
dc.subject.otherOxides-
dc.subject.otherOptoelectronics-
dc.titleInkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec733368-
dc.date.updated2023-06-19T17:46:00Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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