Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/218182
Title: Thin-Film Stabilization of a Ferroelectric Orthorhombic α Pr2WO6 Polymorph
Author: Lheureux, Mégane
Chambrier, Marie-Hélene
Dalla Francesca, Kevin
Vargas, Beatriz
Yedra Cardona, Lluís
Da Costa, Antonio
Carlier, Thomas
Blanchard, Florent
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Roussel, Pascal
Blach, Jean-Francois
Ferri, Anthony
Desfeux, Rachel
Keywords: Microscòpia electrònica de transmissió
Pel·lícules fines
Ferroelectricitat
Transmission electron microscopy
Thin films
Ferroelectricity
Issue Date: 2022
Abstract: A new orthorhombic α-Pr2WO6 (PrWO) polymorph with a = 16.57(5) Å, b = 5.52(5) Å and c= 8.73(1) Å, isostructural to α-La2WO6 and α-Nd2WO6, has been stabilized in the form of thin film by pulsed laser deposition on (001)-oriented SrTiO3 substrates. Combining X-ray diffraction pole-figure measurements and transmission electron microscopy (TEM) analysis, the c-axis films gave evidence of the orientations [100]PrWO || [110]STO and [010]PrWO || [110]STO in the plane. Advanced φ-scans and reciprocal space mapping characterizations confirm the existence of the orthorhombic (Pm21n) structure in the film in place to the tetragonal one as also suggested. X-ray thermodiffraction measurements highlight the stability of this polymorph in thin film up to 900°C at least. Optical measurements performed by spectroscopic ellipsometry reveal that the band gap in such 36 nm-thick films (as confirmed by both X-ray reflectivity and TEM measurements) is 2.5 eV. Besides, the local piezoelectric hysteresis loops recorded by using the spectroscopic tool of the piezoresponse force microscopy attest to the robustness of the piezoelectricity and ferroelectricity in these α-Pr2WO6 films. This study demonstrates the existence of a new lead-free ferroelectric material in the series of the α- Ln2WO6 (lanthanide) tungstates which can be considered as a promising candidate for applications in both nanoelectromechanically and energy harvesting systems as well as for integrating optics.
Note: Versió postprint del document publicat a: https://doi.org/10.1021/acsaelm.2c00913
It is part of: Acs Applied Electronic Materials, 2022, vol. 4, num.11, p. 5234-5245
URI: https://hdl.handle.net/2445/218182
Related resource: https://doi.org/10.1021/acsaelm.2c00913
ISSN: 2637-6113
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Articles publicats en revistes (Institut de Nanociència i Nanotecnologia (IN2UB))

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