Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/218383
Title: <strong>An ultra-low power wake-Up timer compatible with n-FET based flexible technologies</strong><br />
Author: Narbón, D.
Soler-Fernández, J. L.
Santos, A.
Barquinha, P.
Martins, R.
Diéguez Barrientos, Àngel
Prades, J. D.
Alonso Casanovas, Oscar
Keywords: Circuits integrats
Òxid de zinc
Integrated circuits
Zinc oxide
Issue Date: 12-Jan-2025
Abstract: Flexible integrated circuits (FlexICs) have drawn increasing attention, particularly in remote sensors and wearables operating in a limited power budget. Here, we present an ultra-low power timer designed to wake-up an external circuit periodically, from a deep-sleep state into an active state, thereby largely reducing the system power consumption. We achieved this with a circuit topology that exploits the transistor’s leakage current to generate a low frequency wake-up signal. This topology is compatible with IC technologies where only n-type transistors are available. The design was implemented with the sustainable FlexIC process of PragmatIC, that is based on Indium Gallium Zinc Oxide (IGZO) thin-film transistors. Our timer generates mean wake-up frequency of 0.24 ± 0.15 Hz, with a mean power consumption of 26.7 ± 14.1 nW. In this paper, we provide details of the Wake-Up timer’s design and performance at different supply voltages, under temperature variations and different light conditions.
Note: https://doi.org/https://doi.org/10.1038/s41528-024-00374-4
It is part of: 2025
URI: https://hdl.handle.net/2445/218383
Related resource: https://doi.org/https://doi.org/10.1038/s41528-024-00374-4
ISSN: 2397-4621
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Files in This Item:
File Description SizeFormat 
875374.pdf3.25 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.