Please use this identifier to cite or link to this item:
https://hdl.handle.net/2445/218383
Title: | <strong>An ultra-low power wake-Up timer compatible with n-FET based flexible technologies</strong><br /> |
Author: | Narbón, D. Soler-Fernández, J. L. Santos, A. Barquinha, P. Martins, R. Diéguez Barrientos, Àngel Prades, J. D. Alonso Casanovas, Oscar |
Keywords: | Circuits integrats Òxid de zinc Integrated circuits Zinc oxide |
Issue Date: | 12-Jan-2025 |
Abstract: | Flexible integrated circuits (FlexICs) have drawn increasing attention, particularly in remote sensors and wearables operating in a limited power budget. Here, we present an ultra-low power timer designed to wake-up an external circuit periodically, from a deep-sleep state into an active state, thereby largely reducing the system power consumption. We achieved this with a circuit topology that exploits the transistor’s leakage current to generate a low frequency wake-up signal. This topology is compatible with IC technologies where only n-type transistors are available. The design was implemented with the sustainable FlexIC process of PragmatIC, that is based on Indium Gallium Zinc Oxide (IGZO) thin-film transistors. Our timer generates mean wake-up frequency of 0.24 ± 0.15 Hz, with a mean power consumption of 26.7 ± 14.1 nW. In this paper, we provide details of the Wake-Up timer’s design and performance at different supply voltages, under temperature variations and different light conditions. |
Note: | https://doi.org/https://doi.org/10.1038/s41528-024-00374-4 |
It is part of: | 2025 |
URI: | https://hdl.handle.net/2445/218383 |
Related resource: | https://doi.org/https://doi.org/10.1038/s41528-024-00374-4 |
ISSN: | 2397-4621 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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875374.pdf | 3.25 MB | Adobe PDF | View/Open |
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