Please use this identifier to cite or link to this item:
Title: Design and construction of precision heat fluxmeters
Author: Jiménez Fernández, Justo
Rojas Blasi, Emilio
Zamora Carranza, Manuel
Keywords: Aparells i instruments científics
Scientific apparatus and instruments
Issue Date: 1-Dec-1984
Publisher: American Institute of Physics
Abstract: InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with an In molar fraction of 53%, grown at temperatures lower than 530¿°C exhibit alloy decomposition driving an anisotropic InGaAs surface roughness oriented along [1math0]. Conversely, lattice mismatched channels with an In molar fraction of 75% do not present this lateral decomposition but a strain induced roughness, with higher strength as the channel growth temperature increases beyond 490¿°C. In both cases the presence of the roughness implies low and anisotropic Hall mobilities of the two dimensional electron gas.
Note: Reproducció del document publicat a:
It is part of: Journal of Applied Physics, 1984, vol. 56, núm. 11, p. 3353-3356
Related resource:
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Quàntica i Astrofísica)

Files in This Item:
File Description SizeFormat 
11406.pdf337.7 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.