Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24722
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dc.contributor.authorWestwood, David I.cat
dc.contributor.authorWoolf, D. A.cat
dc.contributor.authorVilà i Arbonès, Anna Mariacat
dc.contributor.authorCornet i Calveras, Albertcat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.date.accessioned2012-05-02T06:53:54Z-
dc.date.available2012-05-02T06:53:54Z-
dc.date.issued1993-07-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/24722-
dc.description.abstractThick (∼3 μm) films of InxGa1−xAs grown on GaAs(100) substrates, across the whole composition range, have been examined by transmission electron microscopy and double‐crystal x‐ray diffraction. The results were compared with the observed growth mode of the material determined by in situ reflection high‐energy electron diffraction in the molecular beam epitaxy growth system. The quality of the material degraded noticeably for compositions up to x∼0.5 associated with an increased density of dislocations and stacking faults. In contrast, improvements in quality as x approached 1.0 were correlated with the introduction of an increasingly more regular array of edge dislocations.-
dc.format.extent5 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.354827-
dc.relation.ispartofJournal of Applied Physics, 1993, vol. 74, núm. 3, p. 1731-1735-
dc.relation.urihttp://dx.doi.org/10.1063/1.354827-
dc.rights(c) American Institute of Physics, 1993-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationCristal·lografiacat
dc.subject.classificationNanotecnologiacat
dc.subject.otherCrystallographyeng
dc.subject.otherNanotechnologyeng
dc.titleInfluence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxyeng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec87816-
dc.date.updated2012-04-20T11:52:48Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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