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http://hdl.handle.net/2445/24723Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Georgakilas, Alexander | cat |
| dc.contributor.author | Christou, Aris | cat |
| dc.contributor.author | Zekentes, Konstantinos | cat |
| dc.contributor.author | Mercy, J. M. | cat |
| dc.contributor.author | Konczewic, L. K. | cat |
| dc.contributor.author | Vilà i Arbonès, Anna Maria | cat |
| dc.contributor.author | Cornet i Calveras, Albert | cat |
| dc.date.accessioned | 2012-05-02T06:59:05Z | - |
| dc.date.available | 2012-05-02T06:59:05Z | - |
| dc.date.issued | 1994-07-01 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/2445/24723 | - |
| dc.description.abstract | Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties. | eng |
| dc.format.extent | 3 p. | - |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | eng | - |
| dc.publisher | American Institute of Physics | - |
| dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.357652 | - |
| dc.relation.ispartof | Journal of Applied Physics, 1994, vol. 76, num. 3, p. 1948-1950 | - |
| dc.relation.uri | http://dx.doi.org/10.1063/1.357652 | - |
| dc.rights | (c) American Institute of Physics, 1994 | - |
| dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
| dc.subject.classification | Camps magnètics | cat |
| dc.subject.classification | Nanotecnologia | cat |
| dc.subject.other | Magnetic fields | eng |
| dc.subject.other | Nanotechnology | eng |
| dc.title | Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon | eng |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.identifier.idgrec | 91318 | - |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | |
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