Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy

Pérez Murano, Francesc; Abadal, G.; Barniol i Beumala, Núria; Aymerich Humet, Xavier; Servat, J.; Gorostiza Langa, Pablo Ignacio; Sanz Carrasco, Fausto

Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24743

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DC Field	Value	Language
dc.contributor.author	Pérez Murano, Francesc	cat
dc.contributor.author	Abadal, G.	cat
dc.contributor.author	Barniol i Beumala, Núria	cat
dc.contributor.author	Aymerich Humet, Xavier	cat
dc.contributor.author	Servat, J.	cat
dc.contributor.author	Gorostiza Langa, Pablo Ignacio	cat
dc.contributor.author	Sanz Carrasco, Fausto	cat
dc.date.accessioned	2012-05-02T11:05:11Z	-
dc.date.available	2012-05-02T11:05:11Z	-
dc.date.issued	1995-12-01	-
dc.identifier.issn	0021-8979	-
dc.identifier.uri	http://hdl.handle.net/2445/24743	-
dc.description.abstract	The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance.	-
dc.format.extent	5 p.	-
dc.format.mimetype	application/pdf	-
dc.language.iso	eng	eng
dc.publisher	American Institute of Physics	-
dc.relation.isformatof	Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360505	-
dc.relation.ispartof	Journal of Applied Physics, 1995, vol. 78, núm. 11, p. 6797-6802	-
dc.relation.uri	http://dx.doi.org/10.1063/1.360505	-
dc.rights	(c) American Institute of Physics, 1995	-
dc.source	Articles publicats en revistes (Ciència dels Materials i Química Física)	-
dc.subject.classification	Microscòpia de força atòmica	cat
dc.subject.classification	Silici	cat
dc.subject.classification	Nanoelectrònica	cat
dc.subject.classification	Detectors	cat
dc.subject.classification	Camps elèctrics	cat
dc.subject.other	Atomic force microscopy	eng
dc.subject.other	Silicon	eng
dc.subject.other	Nanoelectronics	eng
dc.subject.other	Detectors	eng
dc.subject.other	Electric fields	eng
dc.title	Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy	eng
dc.type	info:eu-repo/semantics/article	-
dc.type	info:eu-repo/semantics/publishedVersion	-
dc.identifier.idgrec	105869	-
dc.date.updated	2012-04-25T10:54:02Z	-
dc.rights.accessRights	info:eu-repo/semantics/openAccess	-
Appears in Collections:	Articles publicats en revistes (Ciència dels Materials i Química Física)

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