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http://hdl.handle.net/2445/24745
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DC Field | Value | Language |
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dc.contributor.author | Vilà i Arbonès, Anna Maria | cat |
dc.contributor.author | Cornet i Calveras, Albert | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.contributor.author | Ruterana, Pierre | cat |
dc.contributor.author | Loubradou, Marc | cat |
dc.contributor.author | Bonnet, Roland | cat |
dc.date.accessioned | 2012-05-02T11:13:30Z | - |
dc.date.available | 2012-05-02T11:13:30Z | - |
dc.date.issued | 1996-01-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24745 | - |
dc.description.abstract | High‐resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular‐beam‐epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoreticalmodel could explain some observations. | - |
dc.format.extent | 6 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360812 | - |
dc.relation.ispartof | Journal of Applied Physics, 1996, vol. 79, núm. 2, p. 676-681 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.360812 | - |
dc.rights | (c) American Institute of Physics, 1996 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Microscòpia electrònica | cat |
dc.subject.classification | Feixos moleculars | cat |
dc.subject.other | Electron microscopy | eng |
dc.subject.other | Molecular beams | eng |
dc.title | Structure of 60° dislocations at the GaAs/Si interface | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 106453 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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106453.pdf | 2.41 MB | Adobe PDF | View/Open |
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