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dc.contributor.authorRoura Grabulosa, Perecat
dc.contributor.authorLópez de Miguel, Manuelcat
dc.contributor.authorCornet i Calveras, Albertcat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.description.abstractA series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics.eng
dc.format.extent5 p.-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a:
dc.relation.ispartofJournal of Applied Physics, 1997, vol. 81, num. 10, p. 6916-6920-
dc.rights(c) American Institute of Physics, 1997-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationMicroscòpia electrònicacat
dc.subject.classificationPel·lícules finescat
dc.subject.otherElectron microscopyeng
dc.subject.otherThin filmseng
dc.titleDetermination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyeng
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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