Please use this identifier to cite or link to this item:
|Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmas
|Viera Mármol, Gregorio
Bertrán Serra, Enric
Roca i Cabarrocas, P. (Pere)
Plasma (Ionized gases)
Plasma (Gasos ionitzats)
|American Institute of Physics
|Nanostructured Si thin films, also referred as polymorphous, were grown by plasma-enhanced chemical vapor deposition. The term "polymorphous" is used to define silicon material that consists of a two-phase mixture of amorphous and ordered Si. The plasma conditions were set to obtain Si thin films from the simultaneous deposition of radical and ordered nanoparticles. Here, a careful analysis by electron transmission microscopy and electron diffraction is reported with the aim to clarify the specific atomic structure of the nanocrystalline particles embedded in the films. Whatever the plasma conditions, the electron diffraction images always revealed the existence of a well-defined crystalline structure different from the diamondlike structure of Si. The formation of nanocrystallinelike films at low temperature is discussed. A Si face-cubic-centered structure is demonstrated here in nanocrystalline particles produced in low-pressure silane plasma at room temperature.
|Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1506382
|It is part of:
|Journal of Applied Physics, 2002, vol. 92, núm. 8, p. 4684-4694
|Appears in Collections:
|Articles publicats en revistes (Física Aplicada)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.