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http://hdl.handle.net/2445/24805
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DC Field | Value | Language |
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dc.contributor.author | Maffeis, Thierry Gabriel Georges | cat |
dc.contributor.author | Simmonds, Michael C. | cat |
dc.contributor.author | Clark, S. A. | cat |
dc.contributor.author | Peiró Martínez, Francisca | cat |
dc.contributor.author | Haines, Paul | cat |
dc.contributor.author | Parbrook, P. J. | cat |
dc.date.accessioned | 2012-05-03T08:38:07Z | - |
dc.date.available | 2012-05-03T08:38:07Z | - |
dc.date.issued | 2002-09-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24805 | - |
dc.description.abstract | The influence of premetallization surface preparation on the structural, chemical, and electrical properties of Au-nGaN interfaces has been investigated by x-ray photoemission spectroscopy (XPS), current-voltage measurement (I-V) and cross-section transmission electron microscopy (TEM). XPS analysis showed that the three GaN substrate treatments investigated i.e., ex situ hydrofluoric acid etch, in situ anneal in ultrahigh-vacuum (UHV), and in situ Ga reflux cleaning in UHV result in surfaces increasingly free of oxygen contamination. XPS and TEM characterization of Au-nGaN formed after the three premetallization surface treatments show that HF etching and UHV annealing produce abrupt, well-defined interfaces. Conversely, GaN substrate cleaning in a Ga flux results in Au/GaN intermixing. I-V characterization of Au¿nGaN contacts yields a Schottky barrier height of 1.25 eV with a very low-ideality factor and very good contact uniformity for the premetallization UHV anneal, while the Ga reflux cleaning results in a much lower barrier (0.85 eV), with poor ideality and uniformity. I-V and XPS results suggest a high density of acceptor states at the surface, which is further enhanced by UHV annealing. These results are discussed in the context of current models of Schottky barrier formation. | eng |
dc.format.extent | 8 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1501750 | - |
dc.relation.ispartof | Journal of Applied Physics, 2002, vol. 92, núm. 6, p. 3179-3186 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.1501750 | - |
dc.rights | (c) American Institute of Physics, 2002 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Propietats elèctriques | cat |
dc.subject.classification | Ciència dels materials | cat |
dc.subject.other | Electric properties | eng |
dc.subject.other | Materials science | eng |
dc.title | Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 506425 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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File | Description | Size | Format | |
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506425.pdf | 303.77 kB | Adobe PDF | View/Open |
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