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dc.contributor.authorHerranz Casabona, Gervasicat
dc.contributor.authorSánchez Barrera, Florenciocat
dc.contributor.authorMartínez Perea, Benjamincat
dc.contributor.authorFontcuberta i Griñó, Josepcat
dc.contributor.authorGarcía-Cuenca Varona, María Victoriacat
dc.contributor.authorFerrater Martorell, Cèsarcat
dc.contributor.authorVarela Fernández, Manuel, 1956-cat
dc.description.abstractWe report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.eng
dc.format.extent3 p.-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a:
dc.relation.ispartofJournal of Applied Physics, 2004, vol. 95, p. 7213-7215-
dc.rights(c) American Institute of Physics, 2004-
dc.sourceArticles publicats en revistes (Física Aplicada)-
dc.subject.classificationConductivitat elèctricacat
dc.subject.classificationPel·lícules finescat
dc.subject.otherElectric conductivityeng
dc.subject.otherThin filmseng
dc.titleSelf-interference of charge carriers in ferromagnetic SrRuO3eng
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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