Please use this identifier to cite or link to this item:
http://diposit.ub.edu/dspace/handle/2445/24815| Title: | Electrically active point defects in n-type 4H¿SiC |
| Author: | Doyle, J. P. Linnarsson, M. K. Pellegrino, Paolo Keskitalo, N. Svensson, Bengt G. Schoner, A. Nordell, N. Lindstrom, J. L. |
| Keywords: | Estructura electrònica Cristal·lografia Electronic structure Crystallography |
| Issue Date: | 1-Aug-1998 |
| Publisher: | American Institute of Physics |
| Abstract: | An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers .. |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.368247 |
| It is part of: | Journal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357 |
| URI: | https://hdl.handle.net/2445/24815 |
| Related resource: | http://dx.doi.org/10.1063/1.368247 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 521830.pdf | 66.78 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.