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Title: Electrically active point defects in n-type 4H¿SiC
Author: Doyle, J. P.
Linnarsson, M. K.
Pellegrino, Paolo
Keskitalo, N.
Svensson, Bengt G.
Schoner, A.
Nordell, N.
Lindstrom, J. L.
Keywords: Estructura electrònica
Electronic structure
Issue Date: 1-Aug-1998
Publisher: American Institute of Physics
Abstract: An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..
Note: Reproducció del document publicat a:
It is part of: Journal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357
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ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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