Please use this identifier to cite or link to this item:
https://hdl.handle.net/2445/24822
Title: | Electron capture and emission by the Ti acceptor level in GaP |
Author: | Roura Grabulosa, Pere Morante i Lleonart, Joan Ramon Guillot, G. Bremond, G. Ulrici, W. |
Keywords: | Estructura electrònica Propietats òptiques Electronic structure Optical properties |
Issue Date: | 15-Aug-1995 |
Publisher: | American Institute of Physics |
Abstract: | Previously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360097 |
It is part of: | Journal of Applied Physics, 1995, vol. 78, núm. 4, p. 2441-2446 |
URI: | https://hdl.handle.net/2445/24822 |
Related resource: | http://dx.doi.org/10.1063/1.360097 |
ISSN: | 0021-8979 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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523185.pdf | 672.09 kB | Adobe PDF | View/Open |
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