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DC Field | Value | Language |
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dc.contributor.author | Álvarez García, Jacobo | cat |
dc.contributor.author | Pérez Rodríguez, Alejandro | cat |
dc.contributor.author | Romano Rodríguez, Albert | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.contributor.author | Calvo Barrio, Lorenzo | cat |
dc.contributor.author | Scheer, Roland | cat |
dc.contributor.author | Klenk, R. | cat |
dc.date.accessioned | 2012-05-08T07:35:26Z | - |
dc.date.available | 2012-05-08T07:35:26Z | - |
dc.date.issued | 2001-01 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | http://hdl.handle.net/2445/25048 | - |
dc.description.abstract | The microstructure of CuInS2-(CIS2) polycrystalline films deposited onto Mo-coated glass has been analyzed by Raman scattering, Auger electron spectroscopy (AES), transmission electron microscopy, and x-ray diffraction techniques. Samples were obtained by a coevaporation procedure that allows different Cu-to-In composition ratios (from Cu-rich to Cu-poor films). Films were grown at different temperatures between 370 and 520-°C. The combination of micro-Raman and AES techniques onto Ar+-sputtered samples has allowed us to identify the main secondary phases from Cu-poor films such as CuIn5S8 (at the central region of the layer) and MoS2 (at the CIS2/Mo interface). For Cu-rich films, secondary phases are CuS at the surface of as-grown layers and MoS2 at the CIS2/Mo interface. The lower intensity of the MoS2 modes from the Raman spectra measured at these samples suggests excess Cu to inhibit MoS2 interface formation. Decreasing the temperature of deposition to 420-°C leads to an inhibition in observing these secondary phases. This inhibition is also accompanied by a significant broadening and blueshift of the main A1 Raman mode from CIS2, as well as by an increase in the contribution of an additional mode at about 305 cm-1. The experimental data suggest that these effects are related to a decrease in structural quality of the CIS2 films obtained under low-temperature deposition conditions, which are likely connected to the inhibition in the measured spectra of secondary-phase vibrational modes. | eng |
dc.format.extent | 8 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1116/1.1329123 | - |
dc.relation.ispartof | Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 2001, vol. 19, núm. 1, p. 232-239 | - |
dc.relation.uri | http://dx.doi.org/10.1116/1.1329123 | - |
dc.rights | (c) American Institute of Physics, 2001 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Microestructura | cat |
dc.subject.classification | Cèl·lules solars | cat |
dc.subject.classification | Semiconductors | cat |
dc.subject.classification | Pel·lícules fines | cat |
dc.subject.classification | Electrònica quàntica | cat |
dc.subject.other | Microstructure | eng |
dc.subject.other | Solar cells | eng |
dc.subject.other | Semiconductors | eng |
dc.subject.other | Thin films | eng |
dc.subject.other | Quantum electronics | eng |
dc.title | Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 183687 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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183687.pdf | 178.63 kB | Adobe PDF | View/Open |
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