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Title: | Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes |
Author: | Anopchenko, Aleksei Tengattini, Andrea Marconi, Alessandro Prtljaga, Nikola Ramírez Ramírez, Joan Manel Jambois, Olivier Berencén Ramírez, Yonder Antonio Navarro Urrios, Daniel Garrido Fernández, Blas Milesi, F. Colonna, Jean-Philippe Fedeli, Jean-Marc Pavesi, Lorenzo |
Keywords: | Fotònica Òptica integrada Photonics Integrated optics |
Issue Date: | 21-Mar-2012 |
Publisher: | American Institute of Physics |
Abstract: | High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3694680 |
It is part of: | Journal of Applied Physics, 2012, vol. 111, núm. 6, p. 063102-1-063102-5 |
URI: | http://hdl.handle.net/2445/25462 |
Related resource: | http://dx.doi.org/10.1063/1.3694680 |
ISSN: | 0021-8979 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
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