Please use this identifier to cite or link to this item:
https://hdl.handle.net/2445/32210
Title: | Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
Author: | Berencén Ramírez, Yonder Antonio Carreras, Josep Jambois, Olivier Ramírez Ramírez, Joan Manel Rodríguez, J. A. Domínguez, Carlos (Domínguez Horna) Hunt, Charles E. Garrido Fernández, Blas |
Keywords: | Luminescència Física de l'estat sòlid Luminotècnia Dispositius electroòptics Luminescence Solid state physics Lighting Electrooptical devices |
Issue Date: | 2011 |
Publisher: | Optical Society of America |
Abstract: | The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. ©2011 Optical Society of America OCIS codes: (230.2090) Electro-optical devices; (150.2950) Illumination. |
Note: | Reproducció del document publicat a: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-103-A234 |
It is part of: | Optics Express, 2011, vol. 19, num. S3, p. A234-A244 |
URI: | https://hdl.handle.net/2445/32210 |
ISSN: | 1094-4087 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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595941.pdf | 3.66 MB | Adobe PDF | View/Open |
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