Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/32211
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Berencén Ramírez, Yonder Antonio | - |
dc.contributor.author | Jambois, Olivier | - |
dc.contributor.author | Ramírez Ramírez, Joan Manel | - |
dc.contributor.author | Rebled, J. M. (José Manuel) | - |
dc.contributor.author | Estradé Albiol, Sònia | - |
dc.contributor.author | Peiró Martínez, Francisca | - |
dc.contributor.author | Domínguez, Carlos (Domínguez Horna) | - |
dc.contributor.author | Rodríguez, J. A. | - |
dc.contributor.author | Garrido Fernández, Blas | - |
dc.date.accessioned | 2012-10-05T09:41:58Z | - |
dc.date.available | 2012-10-05T09:41:58Z | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 0146-9592 | - |
dc.identifier.uri | http://hdl.handle.net/2445/32211 | - |
dc.description.abstract | Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect. | - |
dc.format.extent | 3 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Optical Society of America | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1364/OL.36.002617 | - |
dc.relation.ispartof | Optics Letters, 2011, vol. 36, num. 14, p. 2617-2619 | - |
dc.relation.uri | http://dx.doi.org/10.1364/OL.36.002617 | - |
dc.rights | (c) Optical Society of America, 2011 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Microelectrònica | - |
dc.subject.classification | Metall-òxid-semiconductors | - |
dc.subject.classification | Luminescència | - |
dc.subject.classification | Optoelectrònica | - |
dc.subject.other | Microelectronics | - |
dc.subject.other | Metal oxide semiconductors | - |
dc.subject.other | Luminescence | - |
dc.subject.other | Optoelectronics | - |
dc.title | Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 596853 | - |
dc.date.updated | 2012-10-05T09:41:58Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
596853.pdf | 436.85 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.