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http://hdl.handle.net/2445/32230Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Drévillon, B. | - |
| dc.contributor.author | Bertrán Serra, Enric | - |
| dc.contributor.author | Alnot, P. | - |
| dc.contributor.author | Olivier, J. | - |
| dc.contributor.author | Razeghi, M. | - |
| dc.date.accessioned | 2012-10-09T08:43:25Z | - |
| dc.date.available | 2012-10-09T08:43:25Z | - |
| dc.date.issued | 1986 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/2445/32230 | - |
| dc.description.abstract | The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized. | - |
| dc.format.extent | 7 p. | - |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | eng | - |
| dc.publisher | American Institute of Physics | - |
| dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.337603 | - |
| dc.relation.ispartof | Journal of Applied Physics, 1986, vol. 60, num. 10, p. 3512-3518 | - |
| dc.relation.uri | http://dx.doi.org/10.1063/1.337603 | - |
| dc.rights | (c) American Institute of Physics , 1986 | - |
| dc.source | Articles publicats en revistes (Física Aplicada) | - |
| dc.subject.classification | Pel·lícules fines | - |
| dc.subject.classification | El·lipsometria | - |
| dc.subject.other | Thin films | - |
| dc.subject.other | Ellipsometry | - |
| dc.title | Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition | - |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.identifier.idgrec | 004363 | - |
| dc.date.updated | 2012-10-09T08:43:25Z | - |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
| Appears in Collections: | Articles publicats en revistes (Física Aplicada) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 004363.pdf | 493.76 kB | Adobe PDF | View/Open |
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