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Title: Polarization strategies to improve the emission of a Si-based light source emitting at 1.55 um
Author: Ramírez Ramírez, Joan Manel
Jambois, Olivier
Berencén Ramírez, Yonder Antonio
Navarro Urrios, Daniel
Anopchenko, Aleksei
Marconi, Alessandro
Prtljaga, Nikola
Daldosso, Nicola
Pavesi, Lorenzo
Colonna, Jean-Philippe
Fedeli, Jean-Marc
Garrido Fernández, Blas
Keywords: Nanocristalls semiconductors
Metall-òxid-semiconductors complementaris
Semiconductor nanocrystals
Complementary metal oxide semiconductors
Issue Date: 5-Dec-2011
Publisher: Elsevier B.V.
Abstract: We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 ◦C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er3+ ions have been extracted.
Note: Versió postprint del document publicat a:
It is part of: Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2011, vol. 177, num. 10, p. 734-738
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ISSN: 0921-5107
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Publicacions de projectes de recerca finançats per la UE

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