Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/32769
Title: | High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy |
Author: | Gacevic, Zarko Fernández-Garrido, S. Rebled, J. M. (José Manuel) Estradé Albiol, Sònia Peiró Martínez, Francisca Calleja Pardo, Enrique |
Keywords: | Optoelectrònica Semiconductors Estructura cristal·lina (Sòlids) Indi (Metall) Optoelectronics Semiconductors Layer structure (Solids) Indium |
Issue Date: | 2011 |
Publisher: | American Institute of Physics |
Abstract: | We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution. |
Note: | Reproducció del document publicat a: https://doi.org/10.1063/1.3614434 |
It is part of: | Applied Physics Letters, 2011, vol. 99, p. 031103-1-031103-3 |
URI: | http://hdl.handle.net/2445/32769 |
Related resource: | https://doi.org/10.1063/1.3614434 |
ISSN: | 0003-6951 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
597577.pdf | 1.38 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.