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http://hdl.handle.net/2445/33305
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DC Field | Value | Language |
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dc.contributor.author | Prtljaga, Nikola | - |
dc.contributor.author | Navarro Urrios, Daniel | - |
dc.contributor.author | Tengattini, Andrea | - |
dc.contributor.author | Anopchenko, Aleksei | - |
dc.contributor.author | Ramírez Ramírez, Joan Manel | - |
dc.contributor.author | Rebled, J. M. (José Manuel) | - |
dc.contributor.author | Estradé Albiol, Sònia | - |
dc.contributor.author | Colonna, Jean-Philippe | - |
dc.contributor.author | Fedeli, Jean-Marc | - |
dc.contributor.author | Garrido Fernández, Blas | - |
dc.contributor.author | Pavesi, Lorenzo | - |
dc.date.accessioned | 2013-01-10T12:48:39Z | - |
dc.date.available | 2013-01-10T12:48:39Z | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 2159-3930 | - |
dc.identifier.uri | http://hdl.handle.net/2445/33305 | - |
dc.description.abstract | We have fabricated a series of thin (~50 nm) erbium-doped (by ion implantation) silicon-rich oxide films in the configuration that mitigates previously proposed mechanisms for loss of light emission capability of erbium ions. By combining the methods of optical, structural and electrical analysis, we identify the erbium ion clustering as a driving mechanism to low optical performance of this material. Experimental findings in this work clearly evidence inadequacy of the commonly employed optimization procedure when optical amplification is considered. We reveal that the significantly lower erbium ion concentrations are to be used in order to fully exploit the potential of this approach and achieve net optical gain. | eng |
dc.format.extent | 8 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | The Optical Society | - |
dc.relation | info:eu-repo/semantics/altIdentifier/doi/10.1364/OME.2.001278 | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1364/OME.2.001278 | eng |
dc.relation.ispartof | Optical Materials Express, 2012, vol. 2, Issue 9, pp. 1278-1285 | eng |
dc.relation.uri | http://dx.doi.org/10.1364/OME.2.001278 | - |
dc.rights | (c) The Optical Society (OSA), 2012 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Ciència dels materials | cat |
dc.subject.classification | Òptica | cat |
dc.subject.other | Materials science | eng |
dc.subject.other | Optics | eng |
dc.title | Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering | eng |
dc.type | info:eu-repo/semantics/article | eng |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | eng |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Articles publicats en revistes (Centres Científics i Tecnològics de la Universitat de Barcelona (CCiTUB)) Publicacions de projectes de recerca finançats per la UE |
Files in This Item:
File | Description | Size | Format | |
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Prtljaga_OSA.pdf | 2.12 MB | Adobe PDF | View/Open |
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